Semiconductor device fabrication

Results: 2185



#Item
321Mon / Architecture / Gate count / Semiconductor device fabrication / Fiske Kimball

1 Gate Counts The chart represents the number of people passing through the security gates at each library. Libraries not listed do not keep a gate count. Alderman1

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Source URL: assessment.library.virginia.edu

Language: English - Date: 2014-07-28 12:22:32
322Matter / Chemistry / Nitrides / Semiconductor device fabrication / Titanium nitride

Technical Data Sheet • page 1 of 2 AMS, Inc. 105 Harrison Street American Falls, Idaho 83211

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Source URL: www.ams-samplers.com

Language: English - Date: 2015-02-20 14:10:46
323Materials science / Semiconductor device fabrication / Electronic engineering / Superhard materials / Condensed matter physics / Photoemission spectroscopy / Atomic layer deposition / Titanium nitride / Silicon dioxide / Chemistry / Emission spectroscopy / Matter

Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Annealing effects of in-depth profiles in TiN/LaO/HfSiO/SiO2/Si gate stack

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-12-27 22:22:07
324Electronic engineering / Integrated circuit / Semiconductor device / Applied Materials / Doping / Wafer / Semiconductor / Transistor / Epitaxy / Semiconductor device fabrication / Technology / Materials science

Chemical Engineers and Semiconductors

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Source URL: www.chemicalengineering.org

Language: English - Date: 2010-08-02 15:56:43
325Radioactivity / Nuclear physics / Ions / Charge carriers / Ion implantation / Ion source / Electron / Ion / Beta decay / Physics / Chemistry / Semiconductor device fabrication

Measuring the absolute decay probability of implantation 82 Sr by ion

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Source URL: www.phy.ornl.gov

Language: English - Date: 2012-12-17 16:10:10
326Semiconductor device fabrication / Thin film deposition / Epitaxy

Photon Factory Activity Report 2006 #24 Part BSurface and Interface 1C, 18A/2005G089 Change in conductivity through the space-charge layer of the Si substrate

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:33:38
327Integrated circuits / Electronics / Technology / Electronic engineering / Emerging technologies / Computer memory / Dynamic random-access memory / Semiconductor device fabrication

Microsoft Word - 1_10_Mitsumasa_Koyanagi_ABSTRACT_BIO.docx

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Source URL: inc11.org

Language: English - Date: 2015-04-24 05:34:02
328Electronic engineering / Semiconductor device fabrication / Atomic physics / Electromagnetism / Photoemission spectroscopy / High-k dielectric / Titanium nitride / Spectroscopy / Core electron / Physics / Chemistry / Emission spectroscopy

Photon Factory Activity Report 2010 #28 Part BSurface and Interface 2C/2008S2-003 Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by

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Source URL: pfwww.kek.jp

Language: English - Date: 2012-01-30 04:32:45
329Publishing / Materials science / Semiconductor device fabrication / Coating / Corrosion / Nafion / Substrate / Carbon nanotube / Layer / Chemistry / Printing / Technology

Microsoft PowerPoint - AC200 TDS v4.pptx

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Source URL: www.swentnano.com

Language: English - Date: 2014-11-07 19:16:41
330Ion implantation / Materials science / Annealing / Chemical elements / Zinc oxide / Nitrogen / Chemistry / Semiconductor device fabrication / Ceramic materials

APPLIED PHYSICS LETTERS 87, 091910 共2005兲 Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam Z. Q. Chen,a兲 M. Maekawa, and A. Kawasuso Advanced Science Research Cen

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Source URL: www.geocities.jp

Language: English - Date: 2005-08-29 02:19:59
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